Selected Design Highlights
- State-of-the-art instrumentatíon amplifier,
- Fourth generation high resolution design.
- Ultra fast settling circuit architecture.
- Precision RF type layout and topology.
- Focused Array high-speed aligned fet output section.
- Generation 2 SHHA hígh-speed hybrid driver features SV technology and custom semiconductor
  topology.
- Power Vault magnetic field containment system.
- New generation vertical mos-fet oulput transistors with innovative servo-bias tracking system.
- Multiple power supply array with independent power supplies and bias adjustment for each
  output device.
- Non-invasive optical and thermal protection circuits.
- Fully discrete design with balancecl monaural operation.
- High current systemboard design with bulk copper technology.
- All modular construction with instrumentation connectors.
- Extreme precision passive components featuring custom Teflon films.
- Ultra-low distortion achieves one-part-p?er-miIIion signal accuracy.

Specifications

Power Output (continuous)
- @ 8 ohms - 225 Watts RMS
- @ 4 ohms - 410 Watts RMS
- @ 2 ohms - 615 Watts RMS

Output Current
- 60 Amps peak per channel

Frequency Response
- ±1 dB, DC-1 MHz
- ±3 dB, DC-1.8 MHz

Distortion
- Static: Less than 0.015% from DC to 100 KHz, typically 0.009% @ 225 WRMS/8 ohms
- Dynamic: 8 Tone Cluster Test 20 KHz @ 500 Hz separation 0.01% 8 ohms 0.015% 4 ohms

Speed
- Rise Time: Less than 225 nanoseconds
- Setting: 28 microseconds to 0signal noise
- Slew Rate: 800 volts/microsecond

Noise
- Signal to Noise: 108dB ASA A
- Crosstalk: 102dB @ full power 8 ohms

Input
- Impedance: 10K ohms
- Sensitivity: 1.5 volts/nominal output

Power Supply
- Line Voltage: 100 volts, 120 volts, 230 volts (factory wired
- AC Voltage Range: ±10%
- Maximum Consumption: 1600 Watts
- Quiescent Consumption: 250 Watts
- Operating Temp: 0° to 50° Celsius range; 32° to 122° Fahrenheit

Dimensions
- 19" (48.22cm) W
- 7 1/4" (18.4cm) H
- 18" (45.8cm) D

Weight
- 70 lbs, (29 KG) Net